Technology Description

Researchers at Washington University in St. Louis have developed a method to control charge doping in 2D materials like graphene. This method uses α-RuCl₃ to create pn junctions at a smaller scale than silicon transistors.

While α-RuCl₃ efficiently removes electrons from graphene to create a charge-doped region, the effect can be mitigated by introducing layers of hexagonal boron nitride (hBN) between the two materials. This allows the charge doping to be precisely controlled and spatially-defined.

Stage of Research

The researchers have constructed and extensively tested prototype devices using monolayer graphene, WSe₂ and EuS.

Publications

• Wang Y, Balgley J, Gerber E, Gray M, … Burch KS. (2020). Modulation doping via a two-dimensional atomic crystalline acceptor. Nano Letters, 20(12): 8446-8452.

Applications

• Construction of transistors from 2D materials (van der Waals heterostructures)

Key Advantages

• Allows creation of transistors smaller than Si-based
• Applicable to multiple 2D materials: graphene, WSe₂, EuS, etc.

Patents: Pending

Related Web Links: Henriksen Profile & Lab